Part Details for BLS6G2731-120,112 by Ampleon
Overview of BLS6G2731-120,112 by Ampleon
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Price & Stock for BLS6G2731-120,112
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
568-12825-ND
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DigiKey | RF MOSFET LDMOS 32V SOT502A Min Qty: 1 Lead time: 16 Weeks Container: Tray |
107 In Stock |
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$218.6375 / $251.7000 | Buy Now |
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Flip Electronics | Stock, ship today | 349 |
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RFQ |
Part Details for BLS6G2731-120,112
BLS6G2731-120,112 CAD Models
BLS6G2731-120,112 Part Data Attributes
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BLS6G2731-120,112
Ampleon
Buy Now
Datasheet
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Compare Parts:
BLS6G2731-120,112
Ampleon
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Ampleon USA Inc. | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 33 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for BLS6G2731-120,112
This table gives cross-reference parts and alternative options found for BLS6G2731-120,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLS6G2731-120,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AGR21045EF | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | Qorvo | BLS6G2731-120,112 vs AGR21045EF |