There are no models available for this part yet.
Overview of BLL1214-35,112 by NXP Semiconductors
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| BLL1214-250 | Rochester Electronics LLC | BLL1214-250 - HF/VHF Power Transistor (Ampleon Die) | |
| BLL1214-35 | Rochester Electronics | BLL1214-35 - HF/VHF Power Transistor (Ampleon Die) |
CAD Models for BLL1214-35,112 by NXP Semiconductors
Part Data Attributes for BLL1214-35,112 by NXP Semiconductors
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|
|
|---|---|
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Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
|
NXP SEMICONDUCTORS
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|
Part Package Code
|
SOT
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Package Description
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CERAMIC PACKAGE-3
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Pin Count
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2
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Manufacturer Package Code
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SOT467C
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.75
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Case Connection
|
SOURCE
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
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75 V
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|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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Highest Frequency Band
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L BAND
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JESD-30 Code
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R-CDFM-F2
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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200 °C
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Package Body Material
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CERAMIC, METAL-SEALED COFIRED
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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110 W
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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FLAT
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Terminal Position
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DUAL
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
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AMPLIFIER
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Transistor Element Material
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SILICON
|