Datasheets
BLF8G20LS-230VJ by:

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6

Part Details for BLF8G20LS-230VJ by Ampleon

Overview of BLF8G20LS-230VJ by Ampleon

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Price & Stock for BLF8G20LS-230VJ

Part # Distributor Description Stock Price Buy
Rochester Electronics BLF8G20LS-230V - Power LDMOS transistor RoHS: Compliant Status: Obsolete Min Qty: 1 144
RFQ
Flip Electronics Stock 13
RFQ

Part Details for BLF8G20LS-230VJ

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BLF8G20LS-230VJ Part Data Attributes

BLF8G20LS-230VJ Ampleon
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BLF8G20LS-230VJ Ampleon RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-6
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Ampleon USA Inc.
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-CQFP-X6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form UNSPECIFIED
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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