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Transistors RF Power Field-Effect Transistors BLF888AS

BLF888AS
Description: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-4

Overview of BLF888AS by NXP Semiconductors

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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for BLF888AS by NXP Semiconductors
Parametric Data

BLF888AS
NXP Semiconductors
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
Package Description
FLATPACK, R-CDFP-F4
Pin Count
4
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Case Connection
SOURCE
Configuration
COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min
110 V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-CDFP-F4
Number of Elements
2
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLATPACK
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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  1. BLF888AS
    NXP Semiconductors
    2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-4
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