Datasheets
BLF7G24LS-100,118 by:

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

Part Details for BLF7G24LS-100,118 by Ampleon

Overview of BLF7G24LS-100,118 by Ampleon

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Price & Stock for BLF7G24LS-100,118

Part # Distributor Description Stock Price Buy
Rochester Electronics BLF7G24LS-100 - Power LDMOS transistor RoHS: Compliant Status: Obsolete Min Qty: 1 100
  • 1 $60.1100
  • 25 $58.9100
  • 100 $56.5000
  • 500 $54.1000
  • 1,000 $51.0900
$51.0900 / $60.1100 Buy Now

Part Details for BLF7G24LS-100,118

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BLF7G24LS-100,118 Part Data Attributes

BLF7G24LS-100,118 Ampleon
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BLF7G24LS-100,118 Ampleon RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-2
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 28 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-CDFP-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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