Datasheets
BLF7G20LS-90P,118 by:
Ampleon
Ampleon
NXP Semiconductors
Not Found

RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4

Part Details for BLF7G20LS-90P,118 by Ampleon

Results Overview of BLF7G20LS-90P,118 by Ampleon

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BLF7G20LS-90P,118 Information

BLF7G20LS-90P,118 by Ampleon is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BLF7G20LS-90P,118

Part # Distributor Description Stock Price Buy
DISTI # 2156-BLF7G20LS-90P,118-1603-ND
DigiKey RF MOSFET Min Qty: 5 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 1200
In Stock
  • 5 $71.5700
$71.5700 Buy Now
DISTI # 86095855
Verical Trans RF FET N-CH 65V 18A 5-Pin CDFM T/R RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1701 Americas - 600
  • 5 $86.0250
  • 25 $84.3000
  • 100 $80.8625
  • 500 $77.4250
  • 1,000 $73.1250
$73.1250 / $86.0250 Buy Now
DISTI # 86094126
Verical Trans RF FET N-CH 65V 18A 5-Pin CDFM T/R RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1601 Americas - 600
  • 5 $86.0250
  • 25 $84.3000
  • 100 $80.8625
  • 500 $77.4250
  • 1,000 $73.1250
$73.1250 / $86.0250 Buy Now
Rochester Electronics BLF7G20LS-90P, Power LDMOS transistor, SOT1121 (ACC-4L) RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 1200
  • 1 $68.8200
  • 25 $67.4400
  • 100 $64.6900
  • 500 $61.9400
  • 1,000 $58.5000
$58.5000 / $68.8200 Buy Now
Flip Electronics Stock, ship today 339
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Part Details for BLF7G20LS-90P,118

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BLF7G20LS-90P,118 Part Data Attributes

BLF7G20LS-90P,118 Ampleon
Buy Now Datasheet
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BLF7G20LS-90P,118 Ampleon RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 18 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-CDFP-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

BLF7G20LS-90P,118 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BLF7G20LS-90P,118 is -40°C to +150°C.

  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet, and use a suitable biasing network to stabilize the device.

  • A good PCB layout should provide a solid ground plane, minimize thermal resistance, and ensure good heat dissipation. Use thermal vias and a heat sink if necessary, and follow the manufacturer's recommended layout guidelines.

  • To troubleshoot oscillations or instability, check the device's operating conditions, biasing, and PCB layout. Ensure the device is properly biased, and the PCB layout is optimized for thermal and electrical performance. Consult the datasheet and application notes for guidance.

  • Use a vector network analyzer or a spectrum analyzer to measure the device's S-parameters, gain, and output power. Follow the manufacturer's recommended test procedures and setup guidelines to ensure accurate measurements.