Part Details for BLF7G20LS-250P,112 by Ampleon
Overview of BLF7G20LS-250P,112 by Ampleon
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
PCI2250PGF | Texas Instruments | 32-Bit, 33 MHz PCI-to-PCI Bridge, Compact PCI Hot-Swap Friendly, 4-Master 176-LQFP 0 to 70 | |
UCC28250PWR | Texas Instruments | Advanced PWM Controller with Pre-Bias Operation 20-TSSOP -40 to 125 | |
TMDS250PAGR | Texas Instruments | 2-to-1 HDMI Switch 64-TQFP 0 to 70 |
Price & Stock for BLF7G20LS-250P,112
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BLF7G20LS-250P,112
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Avnet Americas | Transistor RF FET N-CH 65V 65A 1805MHz to 1880MHz 5-Pin SOT-539B Bulk - Trays (Alt: BLF7G20LS-250P,112) RoHS: Compliant Min Qty: 4 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tray | 3540 Partner Stock |
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$83.4400 / $98.1600 | Buy Now |
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Rochester Electronics | BLF7G20LS-250P - Power LDMOS transistor RoHS: Compliant Status: Obsolete Min Qty: 1 | 3540 |
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$83.4400 / $98.1600 | Buy Now |
Part Details for BLF7G20LS-250P,112
BLF7G20LS-250P,112 CAD Models
BLF7G20LS-250P,112 Part Data Attributes
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BLF7G20LS-250P,112
Ampleon
Buy Now
Datasheet
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Compare Parts:
BLF7G20LS-250P,112
Ampleon
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
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Rohs Code | Yes | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
Package Description | FLATPACK, R-CDFP-F4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Case Connection | SOURCE | |
Configuration | COMMON SOURCE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 65 V | |
Drain Current-Max (ID) | 65 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-CDFP-F4 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLATPACK | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |