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Transistors RF Power Field-Effect Transistors BLF6G27-10G

BLF6G27-10G
Description: RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

Overview of BLF6G27-10G by Ampleon

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics

Available Datasheets

Part # Manufacturer Description Datasheet
RJMG301T244E3ER Amphenol Communications Solutions RJMG 1x1 10G RightAngle
XGXP-1396-10D Amphenol Communications Solutions 10G SFP+ 1310nm LR
XPBL-495596-80D Amphenol Communications Solutions 10G BIDI SFP+ ZR

CAD Models for BLF6G27-10G by Ampleon
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Part Data Attributes for BLF6G27-10G by Ampleon
Parametric Data

BLF6G27-10G
Ampleon
Buy Now
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
AMPLEON NETHERLANDS B V
Package Description
ROHS COMPLIANT, CERAMIC PACKAGE-2
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
65 V
Drain Current-Max (ID)
3.5 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
S BAND
JESD-30 Code
R-CDSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Want to compare parts?
  1. BLF6G27-10G
    Ampleon
    RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
    VS

Alternate Parts for BLF6G27-10G

This table gives cross-reference parts and alternative options found for BLF6G27-10G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF6G27-10G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BLF6G27-10G,112 BLF6G27-10G NXP Semiconductors BLF6G27-10G vs BLF6G27-10G,112
934061844112 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2 NXP Semiconductors BLF6G27-10G vs 934061844112
BLF6G27-10G,112 RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon BLF6G27-10G vs BLF6G27-10G,112
BLF6G27-10,112 BLF6G27-10 NXP Semiconductors BLF6G27-10G vs BLF6G27-10,112
Part Number Description Manufacturer Compare
BLF6G27-10,112 BLF6G27-10 NXP Semiconductors BLF6G27-10G vs BLF6G27-10,112
AGR19030EF RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET TriQuint Semiconductor BLF6G27-10G vs AGR19030EF
AGR19030EF RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Qorvo BLF6G27-10G vs AGR19030EF
934061844112 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2 NXP Semiconductors BLF6G27-10G vs 934061844112
BLF6G27-10G,112 RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon BLF6G27-10G vs BLF6G27-10G,112
BLF6G27-10G,112 BLF6G27-10G NXP Semiconductors BLF6G27-10G vs BLF6G27-10G,112

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