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Transistors / RF Power Field-Effect Transistors / BLF6G27-10G,118
Datasheets
BLF6G27-10G,118 by:
Ampleon
Ampleon
NXP Semiconductors
Not Found

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

Part Details for BLF6G27-10G,118 by Ampleon

Results Overview of BLF6G27-10G,118 by Ampleon

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Applications Consumer Electronics

BLF6G27-10G,118 Information

BLF6G27-10G,118 by Ampleon is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
RJMG301T244E3ER Amphenol Communications Solutions RJMG 1x1 10G RightAngle
XGXP-1396-10D Amphenol Communications Solutions 10G SFP+ 1310nm LR
XPBL-495596-80D Amphenol Communications Solutions 10G BIDI SFP+ ZR

Price & Stock for BLF6G27-10G,118

Part # Distributor Description Stock Price Buy
Flip Electronics Stock, ship today 66
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Part Details for BLF6G27-10G,118

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BLF6G27-10G,118 Part Data Attributes

Parametric Data
BLF6G27-10G,118 Ampleon
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BLF6G27-10G,118 Ampleon RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-2
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Ampleon USA Inc.
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 3.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code S-CDSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

BLF6G27-10G,118 Frequently Asked Questions (FAQ)

  • The maximum operating temperature for the BLF6G27-10G,118 is 150°C, but it's recommended to operate it at a maximum of 120°C for optimal performance and reliability.

  • To optimize the biasing circuit, ensure that the voltage supply is stable and well-regulated, and use a low-ESR capacitor to decouple the bias voltage. Additionally, consider using a bias-tee or a separate bias supply to minimize noise and ensure stable operation.

  • For optimal performance, use a multi-layer PCB with a solid ground plane, and ensure that the device is placed close to the ground plane. Use short, direct connections to the device pins, and avoid using vias or narrow traces near the device. A good grounding scheme is essential to minimize noise and ensure stable operation.

  • To handle thermal management, ensure that the device is mounted on a heat sink or a thermal pad, and use a thermal interface material to fill any gaps. Keep the device away from other heat sources, and ensure good airflow around the device. Monitor the device temperature and adjust the cooling system as needed.

  • The recommended input and output matching networks for the BLF6G27-10G,118 depend on the specific application and frequency range. However, as a general guideline, use a low-pass filter or a band-pass filter at the input, and a conjugate match at the output. Consult the datasheet and application notes for more information.