Datasheets
BLF6G27-10G,118 by:

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

Part Details for BLF6G27-10G,118 by Ampleon

Overview of BLF6G27-10G,118 by Ampleon

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Applications Consumer Electronics

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Price & Stock for BLF6G27-10G,118

Part # Distributor Description Stock Price Buy
Flip Electronics Stock, ship today 66
RFQ

Part Details for BLF6G27-10G,118

BLF6G27-10G,118 CAD Models

BLF6G27-10G,118 Part Data Attributes

BLF6G27-10G,118 Ampleon
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BLF6G27-10G,118 Ampleon RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description SMALL OUTLINE, S-CDSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Description RF FET LDMOS 65V 19DB SOT975C
Samacsys Manufacturer Ampleon USA Inc.
Samacsys Modified On 2024-04-04 06:29:01
Category CO2 Kg 8.9
EU RoHS Version RoHS 2 (2011/65/EU)
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V4.20
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 3.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code S-CDSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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