We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In
Transistors / RF Power Field-Effect Transistors / BLF6G21-10G,112
Datasheets
BLF6G21-10G,112 by:
Ampleon
Ampleon
NXP Semiconductors
Not Found

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

Part Details for BLF6G21-10G,112 by Ampleon

Results Overview of BLF6G21-10G,112 by Ampleon

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

BLF6G21-10G,112 Information

BLF6G21-10G,112 by Ampleon is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
RJMG301T244E3ER Amphenol Communications Solutions RJMG 1x1 10G RightAngle
XGXP-1396-10D Amphenol Communications Solutions 10G SFP+ 1310nm LR
XPBL-495596-80D Amphenol Communications Solutions 10G BIDI SFP+ ZR

Price & Stock for BLF6G21-10G,112

Part # Distributor Description Stock Price Buy
Bristol Electronics   40
RFQ
Rochester Electronics BLF6G21-10G, Power LDMOS transistor, SOT538 (CDIP2) RoHS: Compliant Status: Obsolete Min Qty: 1 3
  • 1 $28.1500
  • 25 $27.5900
  • 100 $26.4600
  • 500 $25.3400
  • 1,000 $23.9300
$23.9300 / $28.1500 Buy Now
Flip Electronics Stock, ship today 60
RFQ

Part Details for BLF6G21-10G,112

BLF6G21-10G,112 CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

BLF6G21-10G,112 Part Data Attributes

Parametric Data
BLF6G21-10G,112 Ampleon
Buy Now Datasheet
Compare Parts:
BLF6G21-10G,112 Ampleon RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-2
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Ampleon USA Inc.
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-CDSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

BLF6G21-10G,112 Related Parts

BLF6G21-10G,112 Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. The device should be placed near the edge of the board to minimize thermal resistance. A thermal via array under the device can also improve heat dissipation.

  • Use a combination of simulation tools and empirical methods to optimize the input and output matching networks. Consider using a load-pull analysis to determine the optimal impedance for maximum power and efficiency.

  • A combination of convection and conduction cooling is recommended. Use a heat sink with a thermal interface material (TIM) and ensure good airflow around the device. In high-power applications, consider using a liquid cooling system.

  • Implement a thermal monitoring and control system to prevent thermal runaway. Use a thermistor or thermocouple to monitor the device temperature and adjust the bias voltage or reduce the input power if the temperature exceeds a certain threshold.

  • The device has internal ESD protection, but handling precautions are still necessary. Use an ESD wrist strap or mat, and handle the device by the package rather than the pins. Avoid touching the pins or exposed die.