Part Details for BLF6G21-10G,112 by Ampleon
Overview of BLF6G21-10G,112 by Ampleon
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 82P33731ABAG | Renesas Electronics Corporation | Synchronous Equipment Timing Source for 10G-40G Synchronous Ethernet | |
| 72P51767L7-5BBI | Renesas Electronics Corporation | 128Q x40 5M 10G DDR Multi-Queue, 1.8V | |
| 72P51777L7-5BBI | Renesas Electronics Corporation | 128Q x40 10M 10G DDR Multi-Queue, 1.8V |
Price & Stock for BLF6G21-10G,112
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 40 |
|
RFQ | ||
|
|
Rochester Electronics | BLF6G21-10G, Power LDMOS transistor, SOT538 (CDIP2) RoHS: Compliant Status: Obsolete Min Qty: 1 | 3 |
|
RFQ | |
|
|
Flip Electronics | Stock, ship today | 160 |
|
RFQ |
Part Details for BLF6G21-10G,112
BLF6G21-10G,112 CAD Models
BLF6G21-10G,112 Part Data Attributes
|
|
BLF6G21-10G,112
Ampleon
Buy Now
Datasheet
|
Compare Parts:
BLF6G21-10G,112
Ampleon
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
| Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Ampleon USA Inc. | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-CDSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |