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BLF6G10L-40BRN,112 by:

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6

Part Details for BLF6G10L-40BRN,112 by Ampleon

Overview of BLF6G10L-40BRN,112 by Ampleon

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Applications Automotive

Price & Stock for BLF6G10L-40BRN,112

Part # Distributor Description Stock Price Buy
Rochester Electronics BLF6G10L-40BRN - Power LDMOS transistor RoHS: Compliant Status: Obsolete Min Qty: 1 45
RFQ

Part Details for BLF6G10L-40BRN,112

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BLF6G10L-40BRN,112 Part Data Attributes

BLF6G10L-40BRN,112 Ampleon
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BLF6G10L-40BRN,112 Ampleon RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description FLANGE MOUNT, S-CQFM-X6
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 11 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code S-CQFM-X6
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form UNSPECIFIED
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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