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RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
568-5103-ND
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DigiKey | RF MOSFET LDMOS 50V SOT539A Min Qty: 1 Lead time: 16 Weeks Container: Tray |
45 In Stock |
|
$333.9595 / $344.3100 | Buy Now |
DISTI #
BLF578,112
|
Avnet Americas | Trans MOSFET N-CH 110V 88A 5-Pin LDMOST Blister - Rail/Tube (Alt: BLF578,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$338.3424 / $394.7328 | Buy Now |
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BLF578,112
Ampleon
Buy Now
Datasheet
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Compare Parts:
BLF578,112
Ampleon
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
|
Rohs Code | Yes | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
Package Description | FLANGE MOUNT, R-CDFM-F4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Ampleon USA Inc. | |
Case Connection | SOURCE | |
Configuration | COMMON SOURCE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 110 V | |
Drain Current-Max (ID) | 88 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-CDFM-F4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |