Datasheets
BLC8G27LS-180AVZ by:

RF Small Signal Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6

Part Details for BLC8G27LS-180AVZ by Ampleon

Overview of BLC8G27LS-180AVZ by Ampleon

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Applications Space Technology Industrial Automation Aerospace and Defense Transportation and Logistics Renewable Energy Automotive Robotics and Drones

Price & Stock for BLC8G27LS-180AVZ

Part # Distributor Description Stock Price Buy
Rochester Electronics BLC8G27LS-180AV - Power LDMOS transistor RoHS: Compliant Status: Obsolete Min Qty: 1 55
  • 1 $67.7100
  • 25 $66.3600
  • 100 $63.6500
  • 500 $60.9400
  • 1,000 $57.5600
$57.5600 / $67.7100 Buy Now

Part Details for BLC8G27LS-180AVZ

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BLC8G27LS-180AVZ Part Data Attributes

BLC8G27LS-180AVZ Ampleon
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BLC8G27LS-180AVZ Ampleon RF Small Signal Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-6
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-PQFP-X6
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 13 dB
Reference Standard IEC-60134
Surface Mount YES
Terminal Form UNSPECIFIED
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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