Datasheets
BLA1011-300 by:

TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-2, FET RF Power

Part Details for BLA1011-300 by NXP Semiconductors

Overview of BLA1011-300 by NXP Semiconductors

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Available Datasheets

Part # Manufacturer Description Datasheet
BLA1011-2 Rochester Electronics LLC BLA1011-2 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die)
BLA1011-300 Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor (Ampleon Die)
BLA1011-10 Rochester Electronics LLC BLA1011-10 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die)

Price & Stock for BLA1011-300

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 1 6
  • 1 $252.9000
$252.9000 Buy Now
Quest Components   148
  • 1 $472.5000
  • 7 $432.0000
  • 11 $405.0000
$405.0000 / $472.5000 Buy Now
Quest Components   4
  • 1 $337.5000
  • 4 $315.0000
$315.0000 / $337.5000 Buy Now

Part Details for BLA1011-300

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BLA1011-300 Part Data Attributes

BLA1011-300 NXP Semiconductors
Buy Now Datasheet
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BLA1011-300 NXP Semiconductors TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-2, FET RF Power
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description CERAMIC PACKAGE-2
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 15 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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