Datasheets
BGD702,112 by: NXP Semiconductors

BGD702 - 750 MHz, 18.5 dB gain power doubler amplifier SFM 7-Pin

Part Details for BGD702,112 by NXP Semiconductors

Results Overview of BGD702,112 by NXP Semiconductors

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Applications Industrial Automation Robotics and Drones

BGD702,112 Information

BGD702,112 by NXP Semiconductors is an RF/Microwave Amplifier.
RF/Microwave Amplifiers are under the broader part category of RF and Microwave Components.

RF and Microwave Engineering focuses on the design and operation of devices that transmit or receive radio waves. The main distinction between RF and microwave engineering is their wavelength, which influences how energy is transmitted and used in various applications. Read more about RF and Microwave Components on our RF and Microwave part category page.

Part Details for BGD702,112

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BGD702,112 Part Data Attributes

BGD702,112 NXP Semiconductors
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BGD702,112 NXP Semiconductors BGD702 - 750 MHz, 18.5 dB gain power doubler amplifier SFM 7-Pin
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SFM
Package Description SOT-115J, 7 PIN
Pin Count 7
Manufacturer Package Code SOT115J
Reach Compliance Code unknown
Additional Feature LOW NOISE, HIGH RELIABILITY
Characteristic Impedance 75 Ω
Construction MODULE
Gain 18.5 dB
Operating Frequency-Max 750 MHz
Operating Frequency-Min 40 MHz
Operating Temperature-Max 100 °C
Operating Temperature-Min -20 °C
Package Body Material PLASTIC/EPOXY
Package Equivalence Code SOT-115J
Power Supplies 24 V
RF/Microwave Device Type WIDE BAND HIGH POWER
Supply Current-Max 435 mA
Technology HYBRID

Alternate Parts for BGD702,112

This table gives cross-reference parts and alternative options found for BGD702,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BGD702,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
934015610112 NXP Semiconductors Check for Price RF/Microwave Amplifier, 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 7 PIN BGD702,112 vs 934015610112
934051230112 NXP Semiconductors Check for Price RF/Microwave Amplifier, 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 7 PIN BGD702,112 vs 934051230112
Part Number Manufacturer Composite Price Description Compare
BGD702MI NXP Semiconductors Check for Price RF/Microwave Amplifier, 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 9 PIN BGD702,112 vs BGD702MI
BGD702N,112 NXP Semiconductors Check for Price BGD702N - 750 MHz, 18.5 dB gain power doubler amplifier SFM 7-Pin BGD702,112 vs BGD702N,112
MHW7185A Motorola Mobility LLC Check for Price 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER BGD702,112 vs MHW7185A
BGD702 NXP Semiconductors Check for Price RF/Microwave Amplifier, 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 7 PIN BGD702,112 vs BGD702
BGD702N NXP Semiconductors Check for Price RF/Microwave Amplifier, 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 7 PIN BGD702,112 vs BGD702N
MHW6185-6A Motorola Mobility LLC Check for Price 40 MHz - 600 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER BGD702,112 vs MHW6185-6A
MHW6185 Motorola Mobility LLC Check for Price 40 MHz - 550 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER BGD702,112 vs MHW6185
MHW7185C Freescale Semiconductor Check for Price 40MHz - 750MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, CASE 714Y-04, 7 PIN BGD702,112 vs MHW7185C
MHW6185B Motorola Mobility LLC Check for Price 40 MHz - 550 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, CASE 714Y-03, 9 PIN BGD702,112 vs MHW6185B
MHW6185B Freescale Semiconductor Check for Price 40 MHz - 550 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, CASE 714Y-03, 9 PIN BGD702,112 vs MHW6185B

BGD702,112 Frequently Asked Questions (FAQ)

  • NXP provides a recommended PCB layout in the application note AN11542, which includes guidelines for component placement, routing, and grounding to minimize noise and ensure optimal performance.

  • To minimize power consumption, configure the device to use the lowest possible supply voltage (VCC) and adjust the bias current (IBIAS) to the minimum required for your application. Additionally, use the power-down mode (PD) when the device is not in use.

  • The maximum operating frequency of the BGD702,112 is 2.7 GHz, but it can be optimized for specific frequency bands by adjusting the external matching network and biasing conditions.

  • Proper biasing is critical for optimal performance. Follow the recommended biasing conditions outlined in the datasheet, and ensure that the voltage and current levels are within the specified ranges. Additionally, use a stable voltage source and decouple the supply lines to minimize noise.

  • The BGD702,112 has a maximum junction temperature (TJ) of 150°C. Ensure good thermal conductivity by using a heat sink or thermal pad, and follow the recommended PCB layout guidelines to minimize thermal resistance. Monitor the device temperature and adjust the operating conditions to prevent overheating.