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Overview of BG5130R by Infineon Technologies AG
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- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for BG5130R by Infineon Technologies AG
Part Data Attributes for BG5130R by Infineon Technologies AG
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Rohs Code
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Yes
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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INFINEON TECHNOLOGIES AG
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Package Description
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SMALL OUTLINE, R-PDSO-G6
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Pin Count
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6
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Configuration
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COMPLEX
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DS Breakdown Voltage-Min
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12 V
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Drain Current-Max (ID)
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0.025 A
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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Highest Frequency Band
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ULTRA HIGH FREQUENCY BAND
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JESD-30 Code
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R-PDSO-G6
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JESD-609 Code
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e3
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Moisture Sensitivity Level
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1
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Number of Elements
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2
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Number of Terminals
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6
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Operating Mode
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DEPLETION MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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0.2 W
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Finish
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MATTE TIN
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Terminal Form
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GULL WING
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Terminal Position
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DUAL
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Transistor Application
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AMPLIFIER
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Transistor Element Material
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SILICON
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