Datasheets
BG3140 by: Infineon Technologies AG

RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-363, 6 PIN

Part Details for BG3140 by Infineon Technologies AG

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Applications Consumer Electronics

Part Details for BG3140

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BG3140 Part Data Attributes

BG3140 Infineon Technologies AG
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BG3140 Infineon Technologies AG RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-363, 6 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SOT-363
Package Description ROHS COMPLIANT, SOT-363, 6 PIN
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW NOISE
Configuration SINGLE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 0.025 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G6
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode DUAL GATE, DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.16 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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