Part Details for BG3130H6327XTSA1 by Infineon Technologies AG
Overview of BG3130H6327XTSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Telecommunications
Price & Stock for BG3130H6327XTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Rochester Electronics | BG3130 - DUAL RF N-Channel MOSFET Tetrode RoHS: Compliant Status: Obsolete Min Qty: 1 | 539693 |
|
$0.0868 / $0.1021 | Buy Now |
|
|
Chip1Cloud | MOSFET N-CH DUAL 8V 25MA SOT363 | 12600 |
|
RFQ |
Part Details for BG3130H6327XTSA1
BG3130H6327XTSA1 CAD Models
BG3130H6327XTSA1 Part Data Attributes
|
|
BG3130H6327XTSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BG3130H6327XTSA1
Infineon Technologies AG
RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-363, 6 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT, SOT-363, 6 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOW NOISE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 0.025 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for BG3130H6327XTSA1
This table gives cross-reference parts and alternative options found for BG3130H6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BG3130H6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BG3130RH6327XTSA1 | RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-363, 6 PIN | Infineon Technologies AG | BG3130H6327XTSA1 vs BG3130RH6327XTSA1 |
| BG3130R | RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-363, 6 PIN | Infineon Technologies AG | BG3130H6327XTSA1 vs BG3130R |