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BFY183ES by:

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, MICRO-X-4

Part Details for BFY183ES by Infineon Technologies AG

Overview of BFY183ES by Infineon Technologies AG

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Applications Education and Research Industrial Automation Telecommunications Electronic Manufacturing

Part Details for BFY183ES

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BFY183ES Part Data Attributes

BFY183ES Infineon Technologies AG
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BFY183ES Infineon Technologies AG RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, MICRO-X-4
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MICROWAVE, X-CXMW-F4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW NOISE
Case Connection EMITTER
Collector Current-Max (IC) 0.065 A
Collector-Base Capacitance-Max 0.44 pF
Collector-Emitter Voltage-Max 12 V
Configuration SINGLE
DC Current Gain-Min (hFE) 55
Highest Frequency Band L BAND
JESD-30 Code X-CXMW-F4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape UNSPECIFIED
Package Style MICROWAVE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Qualification Status Not Qualified
Reference Standard ESA-SCC-5611/006
Surface Mount YES
Terminal Form FLAT
Terminal Position UNSPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 8000 MHz

Alternate Parts for BFY183ES

This table gives cross-reference parts and alternative options found for BFY183ES. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFY183ES, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BFY183(ES) RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, MICRO-X-4 Infineon Technologies AG BFY183ES vs BFY183(ES)
BFY183ES RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN Siemens BFY183ES vs BFY183ES
BFY183(P) RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, MICRO-X-4 Infineon Technologies AG BFY183ES vs BFY183(P)
BFY183P RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN Siemens BFY183ES vs BFY183P
Part Number Description Manufacturer Compare
BFY183P RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN Siemens BFY183ES vs BFY183P
BFY183P RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, MICRO-X-4 Infineon Technologies AG BFY183ES vs BFY183P
BFY183ES RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN Siemens BFY183ES vs BFY183ES
BFY183(ES) RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, MICRO-X-4 Infineon Technologies AG BFY183ES vs BFY183(ES)

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