Datasheets
BFY183 by:

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, MICRO-X1, 4 PIN

Part Details for BFY183 by Infineon Technologies AG

Overview of BFY183 by Infineon Technologies AG

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Applications Education and Research Industrial Automation Telecommunications Electronic Manufacturing

Part Details for BFY183

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BFY183 Part Data Attributes

BFY183 Infineon Technologies AG
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BFY183 Infineon Technologies AG RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, MICRO-X1, 4 PIN
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description HERMETIC SEALED, MICRO-X1, 4 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 0.065 A
Collector-Base Capacitance-Max 0.44 pF
Collector-Emitter Voltage-Max 12 V
Configuration SINGLE
Highest Frequency Band L BAND
JESD-30 Code O-CRDB-F4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 8000 MHz

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