Part Details for BFR360L3E6765XTMA1 by Infineon Technologies AG
Overview of BFR360L3E6765XTMA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
Space Technology
Telecommunications
Price & Stock for BFR360L3E6765XTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
34AC1362
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Newark | Transistor, Rf, Aec-Q101, Npn, Tslp3, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:9V, Transition Frequency Ft:14Ghz, Power Dissipation Pd:210Mw, Dc Collector Current:35Ma, Dc Current Gain Hfe:90Hfe, Rf Transistor Rohs Compliant: Yes |Infineon BFR360L3E6765XTMA1 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 750 |
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$0.1270 / $0.4160 | Buy Now |
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DISTI #
BFR360L3E6765XTMA1CT-ND
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DigiKey | RF TRANS NPN 9V 14GHZ TSLP-3-1 Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
12210 In Stock |
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$0.0845 / $0.4000 | Buy Now |
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DISTI #
BFR360L3E6765XTMA1
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Avnet Americas | Trans GP BJT NPN 6V 0.035A 3-Pin TSLP T/R - Tape and Reel (Alt: BFR360L3E6765XTMA1) RoHS: Compliant Min Qty: 15000 Package Multiple: 15000 Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
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$0.0946 / $0.1082 | Buy Now |
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Future Electronics | BFR360 Series NPN 9V 35mA 14GHz 210mW SMD RF Bipolar Transistors TSLP-3-1 RoHS: Non Compliant pbFree: Yes Min Qty: 15000 Package Multiple: 15000 Container: Reel | 0Reel |
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$0.0891 / $0.0937 | Buy Now |
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DISTI #
80025205
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Verical | Trans RF BJT NPN 6V 0.035A 210mW Automotive AEC-Q101 3-Pin TSLP T/R RoHS: Compliant Min Qty: 15000 Package Multiple: 15000 Date Code: 2417 | Americas - 90000 |
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$0.1088 | Buy Now |
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DISTI #
69264616
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Verical | Trans RF BJT NPN 6V 0.035A 210mW Automotive AEC-Q101 3-Pin TSLP T/R RoHS: Compliant Min Qty: 255 Package Multiple: 1 Date Code: 2151 | Americas - 14760 |
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$0.1050 / $0.1229 | Buy Now |
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Rochester Electronics | BFR360L3 - Low-Noise Si Transistors up to 2.5 GHz RoHS: Compliant Status: Active Min Qty: 1 | 7466 |
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$0.0838 / $0.0986 | Buy Now |
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Ameya Holding Limited | Min Qty: 50 | 8900 |
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$0.2040 / $0.3109 | Buy Now |
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DISTI #
C1S322000901391
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Chip1Stop | RF Transistor RoHS: Compliant pbFree: Yes Container: Cut Tape | 14760 |
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$0.0840 / $0.1300 | Buy Now |
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DISTI #
SP000013561
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EBV Elektronik | Trans GP BJT NPN 6V 0.035A 3-Pin TSLP T/R (Alt: SP000013561) RoHS: Compliant Min Qty: 15000 Package Multiple: 15000 Lead time: 7 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for BFR360L3E6765XTMA1
BFR360L3E6765XTMA1 CAD Models
BFR360L3E6765XTMA1 Part Data Attributes
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BFR360L3E6765XTMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BFR360L3E6765XTMA1
Infineon Technologies AG
RF Small Signal Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 6 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 0.035 A | |
| Collector-Base Capacitance-Max | 0.4 pF | |
| Collector-Emitter Voltage-Max | 6 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 90 | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-PBCC-N3 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.21 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Gold (Au) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 14000 MHz |