Part Details for BFR35AP by Infineon Technologies AG
Overview of BFR35AP by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Space Technology
Audio and Video Systems
Medical Imaging
Telecommunications
Entertainment and Gaming
Price & Stock for BFR35AP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BFR35AP-ND
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DigiKey | BFR35 - LOW-NOISE SI TRANSISTORS Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT | Temporarily Out of Stock |
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Buy Now |
Part Details for BFR35AP
BFR35AP CAD Models
BFR35AP Part Data Attributes
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BFR35AP
Infineon Technologies AG
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Datasheet
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Compare Parts:
BFR35AP
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.045A I(C), 1-Element, L Band, Silicon, NPN, TO-236, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | SOT-23 | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Collector Current-Max (IC) | 0.045 A | |
| Collector-Base Capacitance-Max | 0.55 pF | |
| Collector-Emitter Voltage-Max | 15 V | |
| Configuration | SINGLE | |
| Highest Frequency Band | L BAND | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.28 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 5000 MHz |
Alternate Parts for BFR35AP
This table gives cross-reference parts and alternative options found for BFR35AP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFR35AP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BF240ZL1 | RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Silicon, NPN, TO-92 | Motorola Semiconductor Products | BFR35AP vs BF240ZL1 |
| BFG193 | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4 | Infineon Technologies AG | BFR35AP vs BFG193 |
| NE68633-T1 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | Renesas Electronics Corporation | BFR35AP vs NE68633-T1 |
| 2SC2733 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | Renesas Electronics Corporation | BFR35AP vs 2SC2733 |
| 2N6679 | RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, S Band, Silicon, NPN | Motorola Semiconductor Products | BFR35AP vs 2N6679 |
| BFQ81W | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-323, 3 PIN | Infineon Technologies AG | BFR35AP vs BFQ81W |
| 2SC4900 | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-4 | Hitachi Ltd | BFR35AP vs 2SC4900 |
| BFP182W | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | Siemens | BFR35AP vs BFP182W |
| BFP193W | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, SOT-343, 4 PIN | Infineon Technologies AG | BFR35AP vs BFP193W |
| BF240 | RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Silicon, NPN, TO-92 | Motorola Semiconductor Products | BFR35AP vs BF240 |