Part Details for BFR35AP by Infineon Technologies AG
Results Overview of BFR35AP by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BFR35AP Information
BFR35AP by Infineon Technologies AG is an RF Small Signal Bipolar Transistor.
RF Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BFR35AP
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BFR35AP-ND
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DigiKey | BFR35 - LOW-NOISE SI TRANSISTORS Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT | Temporarily Out of Stock |
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Part Details for BFR35AP
BFR35AP CAD Models
BFR35AP Part Data Attributes
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BFR35AP
Infineon Technologies AG
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Datasheet
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BFR35AP
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.045A I(C), 1-Element, L Band, Silicon, NPN, TO-236, ROHS COMPLIANT PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | SOT-23 | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 0.045 A | |
Collector-Base Capacitance-Max | 0.55 pF | |
Collector-Emitter Voltage-Max | 15 V | |
Configuration | SINGLE | |
Highest Frequency Band | L BAND | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.28 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 5000 MHz |
Alternate Parts for BFR35AP
This table gives cross-reference parts and alternative options found for BFR35AP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFR35AP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BFR180WE6327 | Siemens | Check for Price | RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | BFR35AP vs BFR180WE6327 |
2N5032 | TE Connectivity | Check for Price | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, HERMETIC SEALED PACKAGE-4 | BFR35AP vs 2N5032 |
2SC4900 | Hitachi Ltd | Check for Price | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-4 | BFR35AP vs 2SC4900 |
BFG193 | Infineon Technologies AG | Check for Price | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4 | BFR35AP vs BFG193 |
BFR181W | Siemens | Check for Price | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | BFR35AP vs BFR181W |
BFQ65 | NXP Semiconductors | Check for Price | TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | BFR35AP vs BFQ65 |
BFR280W | Infineon Technologies AG | Check for Price | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, SOT-323, 3 PIN | BFR35AP vs BFR280W |
BFR193WE6327 | Siemens | Check for Price | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | BFR35AP vs BFR193WE6327 |
NE68633-T1 | Renesas Electronics Corporation | Check for Price | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | BFR35AP vs NE68633-T1 |
BFR181W | Infineon Technologies AG | Check for Price | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, SOT-323, 3 PIN | BFR35AP vs BFR181W |