Part Details for BFR182W by Infineon Technologies AG
Overview of BFR182W by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Telecommunications
Price & Stock for BFR182W
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
1095664RL
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Farnell | RF TRANSISTOR, SOT-323 RoHS: Compliant Min Qty: 100 Lead time: 3 Weeks, 1 Days Container: Reel | 0 |
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$0.1606 / $0.1970 | Buy Now |
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DISTI #
1095664
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Farnell | RF TRANSISTOR, SOT-323 RoHS: Compliant Min Qty: 5 Lead time: 3 Weeks, 1 Days Container: Cut Tape | 0 |
|
$0.1606 / $0.3765 | Buy Now |
Part Details for BFR182W
BFR182W CAD Models
BFR182W Part Data Attributes:
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BFR182W
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BFR182W
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | TR, 7 INCH: 3000 | |
| Collector Current-Max (IC) | 0.035 A | |
| Collector-Base Capacitance-Max | 0.5 pF | |
| Collector-Emitter Voltage-Max | 12 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 70 | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-PDSO-G3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.25 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 8000 MHz |
Alternate Parts for BFR182W
This table gives cross-reference parts and alternative options found for BFR182W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFR182W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SC3513IS-01 | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-3 | Hitachi Ltd | BFR182W vs 2SC3513IS-01 |
| 2SC2999 | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, High Frequency Band, Silicon, NPN, ULTRA SMALL, SPA, 3 PIN | SANYO Semiconductor Co Ltd | BFR182W vs 2SC2999 |
| BFS17S | RF Small Signal Bipolar Transistor, 0.025A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN | Siemens | BFR182W vs BFS17S |
| KSP24 | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 | Samsung Semiconductor | BFR182W vs KSP24 |
| 2SC4322 | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP RF Small Signal | Toshiba America Electronic Components | BFR182W vs 2SC4322 |
| 2SC5011FB | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SUPER MINIMOLD PACKAGE-4 | NEC Electronics Group | BFR182W vs 2SC5011FB |
| 2N3953 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, HERMETIC SEALED PACKAGE-4 | TE Connectivity | BFR182W vs 2N3953 |
| MRF957T1 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CASE 419-02, 3 PIN | Motorola Mobility LLC | BFR182W vs MRF957T1 |
| NE58219-T1 | RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3 | NEC Electronics America Inc | BFR182W vs NE58219-T1 |
| NE02139-T1 | RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, L Band, Silicon, NPN, | NEC Electronics America Inc | BFR182W vs NE02139-T1 |