Part Details for BFR181E6327HTSA1 by Infineon Technologies AG
Overview of BFR181E6327HTSA1 by Infineon Technologies AG
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for BFR181E6327HTSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50Y1763
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Newark | Bipolar - Rf Transistor, Npn, 12 V, 8 Ghz, 175 Mw, 20 Ma, 70 Rohs Compliant: Yes |Infineon BFR181E6327HTSA1 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.1360 / $0.5030 | Buy Now |
DISTI #
BFR181E6327HTSA1CT-ND
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DigiKey | RF TRANS NPN 12V 8GHZ SOT23-3 Min Qty: 1 Lead time: 4 Weeks Container: Digi-ReelĀ®, Cut Tape (CT), Tape & Reel (TR) |
2660 In Stock |
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$0.0779 / $0.2500 | Buy Now |
DISTI #
BFR181E6327HTSA1
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Avnet Americas | Trans GP BJT NPN 12V 0.02A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR181E6327HTSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 3984 Partner Stock |
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RFQ | |
DISTI #
BFR181E6327HTSA1
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Avnet Americas | Trans GP BJT NPN 12V 0.02A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR181E6327HTSA1) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 4 Weeks, 0 Days Container: Reel | 0 |
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$0.0806 / $0.0922 | Buy Now |
DISTI #
726-BFR181E6327HTSA1
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Mouser Electronics | RF Bipolar Transistors NPN Silicon RF TRANSISTOR RoHS: Compliant | 17752 |
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$0.0720 / $0.4600 | Buy Now |
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Future Electronics | BFR181 Series 20 V 20 mA Low Noise Silicon Bipolar RF Transistor - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 4 Weeks Container: Reel | 675000Reel |
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$0.0736 / $0.0830 | Buy Now |
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Future Electronics | BFR181 Series 20 V 20 mA Low Noise Silicon Bipolar RF Transistor - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 4 Weeks Container: Reel | 69000Reel |
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$0.0736 / $0.0830 | Buy Now |
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Future Electronics | BFR181 Series 20 V 20 mA Low Noise Silicon Bipolar RF Transistor - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 4 Weeks Container: Reel | 0Reel |
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$0.0736 / $0.0826 | Buy Now |
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Future Electronics | BFR181 Series 20 V 20 mA Low Noise Silicon Bipolar RF Transistor - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 4 Weeks Container: Reel | 0Reel |
|
$0.0736 / $0.0830 | Buy Now |
DISTI #
77680113
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Verical | Trans RF BJT NPN 12V 0.02A 175mW 3-Pin SOT-23 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 6000 Package Multiple: 6000 Date Code: 2330 | Americas - 66000 |
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$0.0927 | Buy Now |
Part Details for BFR181E6327HTSA1
BFR181E6327HTSA1 CAD Models
BFR181E6327HTSA1 Part Data Attributes
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BFR181E6327HTSA1
Infineon Technologies AG
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Datasheet
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BFR181E6327HTSA1
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 0.02 A | |
Collector-Base Capacitance-Max | 0.45 pF | |
Collector-Emitter Voltage-Max | 12 V | |
Configuration | SINGLE | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 8000 MHz |