Part Details for BFP740E6327 by Infineon Technologies AG
Overview of BFP740E6327 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Telecommunications
Price & Stock for BFP740E6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BFP740E6327-ND
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DigiKey | RF TRANSISTOR, X BAND, NPN Min Qty: 904 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
31830 In Stock |
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$0.3300 | Buy Now |
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Rochester Electronics | BFP740 - Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 31830 |
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$0.2851 / $0.3354 | Buy Now |
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Sense Electronic Company Limited | SOT343 | 1601 |
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RFQ |
Part Details for BFP740E6327
BFP740E6327 CAD Models
BFP740E6327 Part Data Attributes:
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BFP740E6327
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BFP740E6327
Infineon Technologies AG
RF Small Signal Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOT-343 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 0.045 A | |
| Collector-Base Capacitance-Max | 0.08 pF | |
| Collector-Emitter Voltage-Max | 4 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 160 | |
| Highest Frequency Band | C BAND | |
| JESD-30 Code | R-PDSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.16 W | |
| Power Gain-Min (Gp) | 19.5 dB | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON GERMANIUM CARBON | |
| Transition Frequency-Nom (fT) | 44000 MHz |