Part Details for BFP620F by Infineon Technologies AG
Overview of BFP620F by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Environmental Monitoring
Space Technology
Telecommunications
Price & Stock for BFP620F
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Chip1Cloud | NPN Silicon Germanium RF Transistor | 6950 |
|
RFQ |
Part Details for BFP620F
BFP620F CAD Models
BFP620F Part Data Attributes
|
BFP620F
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BFP620F
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon Germanium, NPN, 1.40 X 0.80 MM, 0.59 MM HEIGHT, ROHS COMPLIANT, TSFP-4
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW NOISE, HIGH RELIABILITY | |
Collector Current-Max (IC) | 0.08 A | |
Collector-Base Capacitance-Max | 0.2 pF | |
Collector-Emitter Voltage-Max | 2.3 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 100 | |
Highest Frequency Band | C BAND | |
JESD-30 Code | R-PDSO-F4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON GERMANIUM | |
Transition Frequency-Nom (fT) | 65000 MHz |