Part Details for BFP183WE6327 by Infineon Technologies AG
Results Overview of BFP183WE6327 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
Space Technology
Telecommunications
BFP183WE6327 Information
BFP183WE6327 by Infineon Technologies AG is an RF Small Signal Bipolar Transistor.
RF Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BFP183WE6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Low-Noise Si Transistors up to 2.5 GHz RoHS: Compliant Status: Obsolete Min Qty: 1 | 1546 |
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$0.0826 / $0.0972 | Buy Now |
Part Details for BFP183WE6327
BFP183WE6327 CAD Models
BFP183WE6327 Part Data Attributes
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BFP183WE6327
Infineon Technologies AG
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Datasheet
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BFP183WE6327
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 0.065 A | |
| Collector-Base Capacitance-Max | 0.6 pF | |
| Collector-Emitter Voltage-Max | 12 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 50 | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.45 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 8000 MHz |