Part Details for BFP183WE6327 by Infineon Technologies AG
Overview of BFP183WE6327 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BFP183WE6327
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | BFP183 - Low-Noise Si Transistors up to 2.5 GHz ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 106 |
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$0.0826 / $0.0972 | Buy Now |
Part Details for BFP183WE6327
BFP183WE6327 CAD Models
BFP183WE6327 Part Data Attributes
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BFP183WE6327
Infineon Technologies AG
Buy Now
Datasheet
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BFP183WE6327
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 0.065 A | |
Collector-Base Capacitance-Max | 0.6 pF | |
Collector-Emitter Voltage-Max | 12 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 50 | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.45 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 8000 MHz |
Alternate Parts for BFP183WE6327
This table gives cross-reference parts and alternative options found for BFP183WE6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFP183WE6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BFP183WE6327 | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | Siemens | BFP183WE6327 vs BFP183WE6327 |