Part Details for BFG410WT/R by NXP Semiconductors
Overview of BFG410WT/R by NXP Semiconductors
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- Part Data Attributes: (Available)
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Applications
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Part Details for BFG410WT/R
BFG410WT/R CAD Models
BFG410WT/R Part Data Attributes
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BFG410WT/R
NXP Semiconductors
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Datasheet
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BFG410WT/R
NXP Semiconductors
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Additional Feature | LOW NOISE | |
| Case Connection | EMITTER | |
| Collector Current-Max (IC) | 0.012 A | |
| Collector-Emitter Voltage-Max | 4.5 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 50 | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.054 W | |
| Power Dissipation-Max (Abs) | 0.054 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 22000 MHz |