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Transistors / RF Small Signal Bipolar Transistors / BFG135T/R
Datasheets
BFG135T/R by:
NXP Semiconductors
NXP Semiconductors
Philips Semiconductors
YAGEO Corporation
Not Found

TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP RF Small Signal

Part Details for BFG135T/R by NXP Semiconductors

Results Overview of BFG135T/R by NXP Semiconductors

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Audio and Video Systems

BFG135T/R Information

BFG135T/R by NXP Semiconductors is an RF Small Signal Bipolar Transistor.
RF Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BFG135T/R

Part # Distributor Description Stock Price Buy
Bristol Electronics   1182
RFQ

Part Details for BFG135T/R

BFG135T/R CAD Models

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BFG135T/R Part Data Attributes

Parametric Data
BFG135T/R NXP Semiconductors
Buy Now Datasheet
Compare Parts:
BFG135T/R NXP Semiconductors TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP RF Small Signal
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SC-73
Package Description PLASTIC, SC-73, 4 PIN
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Additional Feature BUILT-IN EMITTER BALLASTING RESISTORS
Case Connection COLLECTOR
Collector Current-Max (IC) 0.15 A
Collector-Emitter Voltage-Max 15 V
Configuration SINGLE
DC Current Gain-Min (hFE) 80
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 7000 MHz

Alternate Parts for BFG135T/R

This table gives cross-reference parts and alternative options found for BFG135T/R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFG135T/R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BFG135-T NXP Semiconductors Check for Price TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal BFG135T/R vs BFG135-T
Part Number Manufacturer Composite Price Description Compare
BFG135TRL YAGEO Corporation Check for Price RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN BFG135T/R vs BFG135TRL
BFG135 YAGEO Corporation Check for Price RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN BFG135T/R vs BFG135
933919940115 NXP Semiconductors Check for Price UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SOT-223, 4 PIN BFG135T/R vs 933919940115
BFG135 NXP Semiconductors Check for Price UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SOT-223, 4 PIN BFG135T/R vs BFG135
BFG135TRL13 NXP Semiconductors Check for Price UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR BFG135T/R vs BFG135TRL13
BFG135,115 NXP Semiconductors Check for Price BFG135 - NPN 7 GHz wideband transistor SC-73 4-Pin BFG135T/R vs BFG135,115
BFG135TRL13 YAGEO Corporation Check for Price RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN BFG135T/R vs BFG135TRL13

BFG135T/R Frequently Asked Questions (FAQ)

  • The maximum safe operating temperature for the BFG135T/R is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.

  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Typically, this involves setting the base-emitter voltage (VBE) between 0.6 V to 0.8 V, and the collector-emitter voltage (VCE) within the recommended range. Additionally, ensure the base current is within the specified limits to avoid overheating or damage.

  • For optimal thermal management, use a PCB layout that provides good heat dissipation, such as using a thermal pad or a heat sink. Ensure the transistor is mounted on a copper plane or a thermal via to dissipate heat efficiently. Additionally, follow the recommended pinout and layout guidelines in the datasheet to minimize thermal resistance and electromagnetic interference (EMI).

  • Yes, the BFG135T/R can be used in switching applications, but it's essential to consider the transistor's switching characteristics, such as the transition frequency, rise and fall times, and the maximum collector current. Ensure the device is operated within the recommended switching frequency range, and consider using a snubber circuit to reduce electromagnetic interference (EMI) and voltage spikes.

  • To protect the BFG135T/R from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Ensure the device is properly grounded during assembly and testing, and consider using ESD protection devices, such as diodes or resistors, in the circuit design.