Datasheets
BF999 by:

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Part Details for BF999 by Siemens

Overview of BF999 by Siemens

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Applications Consumer Electronics Audio and Video Systems

Part Details for BF999

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BF999 Part Data Attributes:

BF999 Siemens
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BF999 Siemens RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.03 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.2 W
Power Gain-Min (Gp) 25 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for BF999

This table gives cross-reference parts and alternative options found for BF999. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BF999, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BF999 RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-23, 3 PIN Infineon Technologies AG BF999 vs BF999
BF999E6327 RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG BF999 vs BF999E6327
BF999E6327 RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET Siemens BF999 vs BF999E6327
Part Number Description Manufacturer Compare
2N3823 Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-206AF, HERMETIC SEALED, TO-72, 4 PIN TT Electronics Resistors BF999 vs 2N3823
2SK55 RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92 Hitachi Ltd BF999 vs 2SK55
2N5486RLRP UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 Motorola Mobility LLC BF999 vs 2N5486RLRP
BF999E6327 RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET Siemens BF999 vs BF999E6327

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