Datasheets
BF998WR,115 by: NXP Semiconductors

BF998WR - N-channel dual-gate MOSFET

Part Details for BF998WR,115 by NXP Semiconductors

Overview of BF998WR,115 by NXP Semiconductors

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Applications Consumer Electronics Space Technology Audio and Video Systems Aerospace and Defense Telecommunications

Part Details for BF998WR,115

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BF998WR,115 Part Data Attributes:

BF998WR,115 NXP Semiconductors
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BF998WR,115 NXP Semiconductors BF998WR - N-channel dual-gate MOSFET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOT
Package Description PLASTIC, SOT-343R, 4 PIN
Pin Count 4
Manufacturer Package Code SOT343R
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.75
Samacsys Manufacturer NXP
Additional Feature LOW NOISE
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 0.03 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Mode DUAL GATE, DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for BF998WR,115

This table gives cross-reference parts and alternative options found for BF998WR,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BF998WR,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BF998TRL13 RF Small Signal Field-Effect Transistor, 1-Element, Silicon YAGEO Corporation BF998WR,115 vs BF998TRL13
BF998W RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-343, 4 PIN Infineon Technologies AG BF998WR,115 vs BF998W
BF998WR-TAPE-13 TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal NXP Semiconductors BF998WR,115 vs BF998WR-TAPE-13
934002640215 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4 NXP Semiconductors BF998WR,115 vs 934002640215
BF998R-TAPE-7 TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal NXP Semiconductors BF998WR,115 vs BF998R-TAPE-7
BF998-T TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal NXP Semiconductors BF998WR,115 vs BF998-T
BF998WR-TAPE-7 TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal NXP Semiconductors BF998WR,115 vs BF998WR-TAPE-7
BF998-TAPE-13 TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal NXP Semiconductors BF998WR,115 vs BF998-TAPE-13
BF998R,215 N-channel dual-gate MOSFET SOT-143 4-Pin NXP Semiconductors BF998WR,115 vs BF998R,215
BF998 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4 NXP Semiconductors BF998WR,115 vs BF998
Part Number Description Manufacturer Compare
BF990A TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SOT-143, 4 PIN, FET RF Small Signal NXP Semiconductors BF998WR,115 vs BF990A
BF990ART/R TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal NXP Semiconductors BF998WR,115 vs BF990ART/R
BF998WR-TAPE-7 TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal NXP Semiconductors BF998WR,115 vs BF998WR-TAPE-7
BF993 RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET Siemens BF998WR,115 vs BF993
BF991 RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET YAGEO Corporation BF998WR,115 vs BF991
3SK151 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal Toshiba America Electronic Components BF998WR,115 vs 3SK151
3SK293 TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal Toshiba America Electronic Components BF998WR,115 vs 3SK293
BF992-T TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SOT-143, 4 PIN, FET RF Small Signal NXP Semiconductors BF998WR,115 vs BF992-T
3SK199 TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal Toshiba America Electronic Components BF998WR,115 vs 3SK199
BF991-T TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SOT-143, 4 PIN, FET RF Small Signal NXP Semiconductors BF998WR,115 vs BF991-T

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