Part Details for BF998,215 by NXP Semiconductors
Overview of BF998,215 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Space Technology
Audio and Video Systems
Aerospace and Defense
Telecommunications
Price & Stock for BF998,215
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
75R4683
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Newark | Dual N Channel Rf Mosfet, 12V, 30Ma, 4-Sot-143B, Drain Source Voltage Vds:12V, Continuous Drain Current Id:30Ma, Power Dissipation:200Mw, Operating Frequency Min:-, Operating Frequency Max:-, No. Of Pins:4Pins, Channel Type:N Channelrohs Compliant: Yes |Nxp BF998,215 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Part Details for BF998,215
BF998,215 CAD Models
BF998,215 Part Data Attributes:
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BF998,215
NXP Semiconductors
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Datasheet
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Compare Parts:
BF998,215
NXP Semiconductors
N-channel dual-gate MOSFET SOT-143 4-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | SOT-143 | |
Package Description | PLASTIC PACKAGE-4 | |
Pin Count | 4 | |
Manufacturer Package Code | SOT143B | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.75 | |
Samacsys Manufacturer | NXP | |
Additional Feature | LOW NOISE | |
Case Connection | SOURCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 0.03 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DUAL GATE, DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.2 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for BF998,215
This table gives cross-reference parts and alternative options found for BF998,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BF998,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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934002640215 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4 | NXP Semiconductors | BF998,215 vs 934002640215 |
BF998W | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-343, 4 PIN | Infineon Technologies AG | BF998,215 vs BF998W |
BF998WRT/R | TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal | NXP Semiconductors | BF998,215 vs BF998WRT/R |
BF998WR,115 | BF998WR - N-channel dual-gate MOSFET | NXP Semiconductors | BF998,215 vs BF998WR,115 |
934002660235 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SC-61AA, 4 PIN | NXP Semiconductors | BF998,215 vs 934002660235 |
BF998R | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SC-61AA, 4 PIN | NXP Semiconductors | BF998,215 vs BF998R |
BF998 | RF Small Signal Field-Effect Transistor, 1-Element, Silicon | YAGEO Corporation | BF998,215 vs BF998 |
BF998TRL | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET | NXP Semiconductors | BF998,215 vs BF998TRL |
BF998 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 | Infineon Technologies AG | BF998,215 vs BF998 |
BF998R-TAPE-13 | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | NXP Semiconductors | BF998,215 vs BF998R-TAPE-13 |