Datasheets
BF996S by:

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Part Details for BF996S by Temic Semiconductors

Overview of BF996S by Temic Semiconductors

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Applications Education and Research Environmental Monitoring Space Technology Industrial Automation Telecommunications Electronic Manufacturing

Part Details for BF996S

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BF996S Part Data Attributes:

BF996S Temic Semiconductors
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BF996S Temic Semiconductors RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Part Life Cycle Code Transferred
Ihs Manufacturer TEMIC SEMICONDUCTORS
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.03 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 0.035 pF
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode DUAL GATE, DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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