Datasheets
BF961 by:
Siemens
Infineon Technologies AG
New Jersey Semiconductor Products Inc
Siemens
Telefunken Microelectronics Gmbh
Temic Semiconductors
Vishay Intertechnologies
Vishay Semiconductors
Not Found

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Part Details for BF961 by Siemens

Overview of BF961 by Siemens

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Applications Audio and Video Systems Telecommunications Entertainment and Gaming

Part Details for BF961

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BF961 Part Data Attributes

BF961 Siemens
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BF961 Siemens RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SIEMENS A G
Package Description DISK BUTTON, O-PRDB-F4
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.03 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-PRDB-F4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Mode DUAL GATE, DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style DISK BUTTON
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.2 W
Power Gain-Min (Gp) 23 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form FLAT
Terminal Position RADIAL
Transistor Element Material SILICON

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