Part Details for BF570,215 by NXP Semiconductors
Overview of BF570,215 by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Industrial Automation
Electronic Manufacturing
Price & Stock for BF570,215
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BF570,215-954-ND
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DigiKey | NEXPERIA BF570 - SMALL SIGNAL BI Min Qty: 5816 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
55351 In Stock |
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$0.0500 | Buy Now |
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Rochester Electronics | BF570 - Small Signal Bipolar Transistor, TO-236AB RoHS: Compliant Status: Active Min Qty: 1 | 55351 |
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$0.0443 / $0.0521 | Buy Now |
Part Details for BF570,215
BF570,215 CAD Models
BF570,215 Part Data Attributes
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BF570,215
NXP Semiconductors
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Datasheet
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BF570,215
NXP Semiconductors
BF570 - NPN medium frequency transistor TO-236 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | TO-236 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT23 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.75 | |
Factory Lead Time | 4 Weeks | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 15 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 490 MHz |