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Transistors / RF Small Signal Field-Effect Transistors / BF1207,115
Datasheets
BF1207,115 by: NXP Semiconductors

Dual N-channel dual-gate MOSFET TSSOP 6-Pin

Part Details for BF1207,115 by NXP Semiconductors

Results Overview of BF1207,115 by NXP Semiconductors

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Applications Space Technology Aerospace and Defense Telecommunications

BF1207,115 Information

BF1207,115 by NXP Semiconductors is an RF Small Signal Field-Effect Transistor.
RF Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BF1207,115

Part # Distributor Description Stock Price Buy
Vyrian Transistors 213
RFQ

Part Details for BF1207,115

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BF1207,115 Part Data Attributes

Parametric Data
BF1207,115 NXP Semiconductors
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BF1207,115 NXP Semiconductors Dual N-channel dual-gate MOSFET TSSOP 6-Pin
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code TSSOP
Package Description PLASTIC, SC-88, 6 PIN
Pin Count 6
Manufacturer Package Code SOT363
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.21.00.75
Additional Feature LOW NOISE
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 6 V
Drain Current-Max (ID) 0.03 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Number of Elements 2
Number of Terminals 6
Operating Mode DUAL GATE, ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.18 W
Power Gain-Min (Gp) 21 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for BF1207,115

This table gives cross-reference parts and alternative options found for BF1207,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BF1207,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BF1207 NXP Semiconductors Check for Price TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SC-88, 6 PIN, FET RF Small Signal BF1207,115 vs BF1207

BF1207,115 Frequently Asked Questions (FAQ)

  • A good PCB layout for the BF1207,115 involves keeping the input and output tracks as short as possible, using a solid ground plane, and placing decoupling capacitors close to the device. Additionally, it's recommended to use a symmetrical layout to minimize electromagnetic interference (EMI).

  • To ensure proper biasing, make sure to follow the recommended voltage and current settings outlined in the datasheet. Typically, this involves setting the VCC pin to 3.3V or 5V, and the VEE pin to 0V. Also, ensure that the input and output impedances are matched to the device's recommended values.

  • The maximum power dissipation of the BF1207,115 is typically around 1.2W. To avoid exceeding this limit, ensure that the device is operated within the recommended temperature range (typically -40°C to 125°C), and that the input and output currents are within the specified limits. You can also use thermal management techniques such as heat sinks or thermal pads to reduce the device's temperature.

  • To troubleshoot issues with the BF1207,115, start by checking the PCB layout and ensuring that it meets the recommended guidelines. Verify that the input and output impedances are matched, and that the device is properly biased. Use oscilloscopes or spectrum analyzers to measure the device's output and identify any signs of oscillation or instability. You can also try reducing the gain or increasing the stability capacitors to improve the device's stability.

  • Yes, the BF1207,115 can be used in switching regulator applications. However, it's essential to take precautions to ensure the device can handle the high-frequency switching and high-voltage transients. Use a suitable output capacitor to filter the output voltage, and ensure that the device is properly biased and terminated. Additionally, consider using a voltage clamp or transient voltage suppressor to protect the device from voltage spikes.