Datasheets
BF1105WR by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for BF1105WR by Philips Semiconductors

Overview of BF1105WR by Philips Semiconductors

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Applications Consumer Electronics Audio and Video Systems

Part Details for BF1105WR

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BF1105WR Part Data Attributes:

BF1105WR Philips Semiconductors
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BF1105WR Philips Semiconductors Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer PHILIPS SEMICONDUCTORS
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 0.03 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Number of Elements 1
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Finish Matte Tin (Sn)

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