Datasheets
BF1005W by: Infineon Technologies AG

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT343, 4 PIN

Part Details for BF1005W by Infineon Technologies AG

Overview of BF1005W by Infineon Technologies AG

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Applications Consumer Electronics Audio and Video Systems Entertainment and Gaming

Part Details for BF1005W

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BF1005W Part Data Attributes

BF1005W Infineon Technologies AG
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BF1005W Infineon Technologies AG RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT343, 4 PIN
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SC-82
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW NOISE
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 0.025 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Mode DUAL GATE, DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.2 W
Power Gain-Min (Gp) 17 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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