Datasheets
BF1005E6327HTSA1 by: Infineon Technologies AG

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Part Details for BF1005E6327HTSA1 by Infineon Technologies AG

Overview of BF1005E6327HTSA1 by Infineon Technologies AG

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Applications Consumer Electronics Audio and Video Systems Entertainment and Gaming

Price & Stock for BF1005E6327HTSA1

Part # Distributor Description Stock Price Buy
Rochester Electronics BF1005 - RF Small Signal, Ultra High Frequency Band, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 847232
  • 1 $0.1021
  • 25 $0.1001
  • 100 $0.0960
  • 500 $0.0919
  • 1,000 $0.0868
$0.0868 / $0.1021 Buy Now

Part Details for BF1005E6327HTSA1

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BF1005E6327HTSA1 Part Data Attributes:

BF1005E6327HTSA1 Infineon Technologies AG
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BF1005E6327HTSA1 Infineon Technologies AG RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOW NOISE
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 0.025 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode DUAL GATE, ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for BF1005E6327HTSA1

This table gives cross-reference parts and alternative options found for BF1005E6327HTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BF1005E6327HTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BF1005E6327 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET Rochester Electronics LLC BF1005E6327HTSA1 vs BF1005E6327
BF1005E6327 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET Infineon Technologies AG BF1005E6327HTSA1 vs BF1005E6327
Part Number Description Manufacturer Compare
BF1005E6327 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET Infineon Technologies AG BF1005E6327HTSA1 vs BF1005E6327
BF1005E6327 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET Rochester Electronics LLC BF1005E6327HTSA1 vs BF1005E6327

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