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4A, 60V, NPN, Si, POWER TRANSISTOR, TO-126, ROHS COMPLIANT PACKAGE-3
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BD439
STMicroelectronics
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Datasheet
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BD439
STMicroelectronics
4A, 60V, NPN, Si, POWER TRANSISTOR, TO-126, ROHS COMPLIANT PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | SIP | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | STMicroelectronics | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 4 A | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 25 | |
JEDEC-95 Code | TO-126 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 36 W | |
Power Dissipation-Max (Abs) | 36 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 3 MHz | |
VCEsat-Max | 0.8 V |
This table gives cross-reference parts and alternative options found for BD439. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BD439, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BD439S | NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 2000/BULK | Fairchild Semiconductor Corporation | BD439 vs BD439S |
BD439 | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin | Fairchild Semiconductor Corporation | BD439 vs BD439 |
BD439 | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin | Samsung Semiconductor | BD439 vs BD439 |
BD439 | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 | Continental Device India Ltd | BD439 vs BD439 |
BD439 | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, | Crimson Semiconductor Inc | BD439 vs BD439 |
BD439 | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, | Central Semiconductor Corp | BD439 vs BD439 |