Part Details for BCY78-IX by Central Semiconductor Corp
Overview of BCY78-IX by Central Semiconductor Corp
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for BCY78-IX
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BCY78-IX
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Avnet Americas | Trans GP BJT PNP 32V 100mA 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: BCY78-IX) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Container: Box | 0 |
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RFQ | |
DISTI #
BCY78-IX
|
Avnet Americas | Trans GP BJT PNP 32V 100mA 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: BCY78-IX) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Container: Box | 0 |
|
RFQ |
Part Details for BCY78-IX
BCY78-IX CAD Models
BCY78-IX Part Data Attributes:
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BCY78-IX
Central Semiconductor Corp
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Datasheet
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BCY78-IX
Central Semiconductor Corp
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 32 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 60 | |
JEDEC-95 Code | TO-18 | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 0.6 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 100 MHz | |
Turn-off Time-Max (toff) | 400 ns | |
Turn-on Time-Max (ton) | 100 ns |