Datasheets
BCW60CE6327 by:

100mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR

Part Details for BCW60CE6327 by Rochester Electronics LLC

Overview of BCW60CE6327 by Rochester Electronics LLC

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Part Details for BCW60CE6327

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BCW60CE6327 Part Data Attributes:

BCW60CE6327 Rochester Electronics LLC
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BCW60CE6327 Rochester Electronics LLC 100mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 32 V
Configuration SINGLE
DC Current Gain-Min (hFE) 90
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz

Alternate Parts for BCW60CE6327

This table gives cross-reference parts and alternative options found for BCW60CE6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BCW60CE6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BCW60CE6433 Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Infineon Technologies AG BCW60CE6327 vs BCW60CE6433
BCW60CE6433 Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Siemens BCW60CE6327 vs BCW60CE6433
BCW60CE6327 Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Infineon Technologies AG BCW60CE6327 vs BCW60CE6327
Part Number Description Manufacturer Compare
BCW60DE6327 Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Siemens BCW60CE6327 vs BCW60DE6327
BCW60DE6433 Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Infineon Technologies AG BCW60CE6327 vs BCW60DE6433
BCW60CE6433 Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Infineon Technologies AG BCW60CE6327 vs BCW60CE6433
BCW60CE6433 Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Siemens BCW60CE6327 vs BCW60CE6433
BCW60DE6327 100mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR Rochester Electronics LLC BCW60CE6327 vs BCW60DE6327
BCW60CE6327 Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Infineon Technologies AG BCW60CE6327 vs BCW60CE6327
BCW60DE6433 Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Siemens BCW60CE6327 vs BCW60DE6433

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