Part Details for BCW30LT1 by Motorola Semiconductor Products
Overview of BCW30LT1 by Motorola Semiconductor Products
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for BCW30LT1
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3689 |
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RFQ | ||
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Quest Components | 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 2951 |
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$0.0336 / $0.1680 | Buy Now |
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Chip 1 Exchange | INSTOCK | 4153 |
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RFQ |
Part Details for BCW30LT1
BCW30LT1 CAD Models
BCW30LT1 Part Data Attributes
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BCW30LT1
Motorola Semiconductor Products
Buy Now
Datasheet
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Compare Parts:
BCW30LT1
Motorola Semiconductor Products
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Base Capacitance-Max | 7 pF | |
Collector-Emitter Voltage-Max | 32 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 215 | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | PNP | |
Power Dissipation Ambient-Max | 0.225 W | |
Power Dissipation-Max (Abs) | 0.225 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 0.3 V |