Part Details for BCR133E6327XT by Infineon Technologies AG
Overview of BCR133E6327XT by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Robotics and Drones
Price & Stock for BCR133E6327XT
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
C1S322000157820
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Chip1Stop | Bipolar Transistor (BJT) RoHS: Not Compliant | 36000 |
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$0.0313 / $0.0483 | Buy Now |
Part Details for BCR133E6327XT
BCR133E6327XT CAD Models
BCR133E6327XT Part Data Attributes
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BCR133E6327XT
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BCR133E6327XT
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 30 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 130 MHz |
Alternate Parts for BCR133E6327XT
This table gives cross-reference parts and alternative options found for BCR133E6327XT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BCR133E6327XT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| Q62702-C2256 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | Infineon Technologies AG | BCR133E6327XT vs Q62702-C2256 |
| BCR133E6327 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | Infineon Technologies AG | BCR133E6327XT vs BCR133E6327 |
| MMUN2211LT1 | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN | onsemi | BCR133E6327XT vs MMUN2211LT1 |
| BCR133 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | BCR133E6327XT vs BCR133 |
| MMUN2211LT3G | NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 10000-REEL | onsemi | BCR133E6327XT vs MMUN2211LT3G |
| MMUN2211LT1 | Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon | LRC Leshan Radio Co Ltd | BCR133E6327XT vs MMUN2211LT1 |
| BCR133E6327 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | Siemens | BCR133E6327XT vs BCR133E6327 |
| BCR133E6327HTSA1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | Infineon Technologies AG | BCR133E6327XT vs BCR133E6327HTSA1 |