Part Details for BCR112W by Siemens
Overview of BCR112W by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BCR112W
BCR112W CAD Models
BCR112W Part Data Attributes
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BCR112W
Siemens
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Datasheet
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BCR112W
Siemens
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.75 | |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 20 | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 0.25 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 140 MHz | |
VCEsat-Max | 0.3 V |
Alternate Parts for BCR112W
This table gives cross-reference parts and alternative options found for BCR112W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BCR112W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BCR169W | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | Siemens | BCR112W vs BCR169W |
BCR129 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | Siemens | BCR112W vs BCR129 |
MUN5111DW1T1 | 100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, SC-70, SC-88, 6 PIN | Rochester Electronics LLC | BCR112W vs MUN5111DW1T1 |
PDTA144TM,315 | PDTA144T series - PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open DFN 3-Pin | NXP Semiconductors | BCR112W vs PDTA144TM,315 |
BCR183W | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | Siemens | BCR112W vs BCR183W |
BCR146W | Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | Siemens | BCR112W vs BCR146W |
BCW60FN | 100mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, SOT-23, 3 PIN | Rochester Electronics LLC | BCR112W vs BCW60FN |
2SC4018KT146N | 100mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR | ROHM Semiconductor | BCR112W vs 2SC4018KT146N |
MUN2237T1G | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, CASE 318D-04, SC-59, 3 PIN | Rochester Electronics LLC | BCR112W vs MUN2237T1G |
BCR196W | Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | Siemens | BCR112W vs BCR196W |