Part Details for BCR112E6327 by Infineon Technologies AG
Overview of BCR112E6327 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BCR112E6327
Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | NPN SILICON DIGITAL TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon RoHS: Compliant | Europe - 6665 |
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RFQ | |
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NexGen Digital | 3000 |
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RFQ |
Part Details for BCR112E6327
BCR112E6327 CAD Models
BCR112E6327 Part Data Attributes:
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BCR112E6327
Infineon Technologies AG
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Datasheet
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BCR112E6327
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 20 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.2 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 140 MHz |
Alternate Parts for BCR112E6327
This table gives cross-reference parts and alternative options found for BCR112E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BCR112E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BCR112E6327 | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | Rochester Electronics LLC | BCR112E6327 vs BCR112E6327 |