Part Details for BCR108E6327 by Infineon Technologies AG
Overview of BCR108E6327 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for BCR108E6327
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3000 |
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RFQ | ||
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Quest Components | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR | 10597 |
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$0.0381 / $0.1172 | Buy Now |
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Quest Components | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR | 3459 |
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$0.0879 / $0.2930 | Buy Now |
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ComSIT USA | NPN SILICON DIGITAL TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon RoHS: Not Compliant |
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RFQ |
Part Details for BCR108E6327
BCR108E6327 CAD Models
BCR108E6327 Part Data Attributes
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BCR108E6327
Infineon Technologies AG
Buy Now
Datasheet
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BCR108E6327
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 21.3636 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 70 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 170 MHz |