Part Details for BC858BL3 by Infineon Technologies AG
Overview of BC858BL3 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BC858BL3
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Chip1Cloud | TRANS PNP 30V 0.1A SOT23 | 22200 |
|
RFQ |
Part Details for BC858BL3
BC858BL3 CAD Models
BC858BL3 Part Data Attributes:
|
BC858BL3
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BC858BL3
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, TSLP-3-1, 3 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | ROHS COMPLIANT, TSLP-3-1, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW NOISE | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Base Capacitance-Max | 1.5 pF | |
Collector-Emitter Voltage-Max | 30 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 220 | |
JESD-30 Code | R-XBCC-N3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 0.25 W | |
Qualification Status | Not Qualified | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 250 MHz | |
VCEsat-Max | 0.65 V |