Part Details for BC856BW by Infineon Technologies AG
Results Overview of BC856BW by Infineon Technologies AG
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Telecommunications
BC856BW Information
BC856BW by Infineon Technologies AG is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BC856BW
BC856BW CAD Models
BC856BW Part Data Attributes
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BC856BW
Infineon Technologies AG
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Datasheet
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BC856BW
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOT-323, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | TR, 7 INCH: 3000 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 1.5 pF | |
| Collector-Emitter Voltage-Max | 65 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 220 | |
| JESD-30 Code | R-PDSO-G3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 0.25 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| VCEsat-Max | 0.65 V |