Part Details for BC856AE6327 by Infineon Technologies AG
Overview of BC856AE6327 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Telecommunications
Price & Stock for BC856AE6327
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BC856AE6327-ND
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DigiKey | BIPOLAR GEN PURPOSE TRANSISTOR Min Qty: 13172 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
48000 In Stock |
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$0.0200 | Buy Now |
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Rochester Electronics | BC856 - General Purpose Transistor ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 48000 |
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$0.0195 / $0.0230 | Buy Now |
Part Details for BC856AE6327
BC856AE6327 CAD Models
BC856AE6327 Part Data Attributes:
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BC856AE6327
Infineon Technologies AG
Buy Now
Datasheet
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BC856AE6327
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | TR, 7 INCH: 3000 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Base Capacitance-Max | 1.5 pF | |
Collector-Emitter Voltage-Max | 65 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 125 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 0.33 W | |
Qualification Status | Not Qualified | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 250 MHz | |
VCEsat-Max | 0.65 V |